Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
Autor: | M J Kirton, M J Uren |
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Rok vydání: | 1989 |
Předmět: | |
Zdroj: | Advances in Physics. 38:367-468 |
ISSN: | 1460-6976 0001-8732 |
DOI: | 10.1080/00018738900101122 |
Popis: | In very small electronic devices the alternate capture and emission of carriers at an individual defect site generates discrete switching in the device resistance—referred to as a random telegraph signal (RTS). The study of RTSs has provided a powerful means of investigating the capture and emission kinetics of single defects, has demonstrated the defect origins of low-frequency (1/ƒ) noise in these devices, and has provided new insight into the nature of defects at the Si/SiO2 interface. |
Databáze: | OpenAIRE |
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