Void formation and electromigration in sputtered Ag lines with different encapsulations

Autor:	Doris Schmitt-Landsiedel, J. Gstöttner, M. Hauder, Walter Hansch
Rok vydání:	2002
Předmět:	Void (astronomy) Materials science Annealing (metallurgy) Lateral diffusion Metals and Alloys Electrical and Electronic Engineering Composite material Condensed Matter Physics Instrumentation Electromigration Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Sensors and Actuators A: Physical. 99:137-143
ISSN:	0924-4247
DOI:	10.1016/s0924-4247(01)00912-8
Popis:	Diffusion and electromigration behavior was investigated for sputtered Ag lines passivated or encapsulated with different PVD deposited barrier layers of Al-oxide, Si-nitride and Ti. It was found that lateral diffusion can decrease the electromigration lifetime of the Ag lines through an annealing induced void formation in the lines. In contrast to Al-oxide, Ti avoids lateral diffusion and works as an excellent adhesion layer between SiO 2 and Ag. Annealing at 573 K improves the lifetime of the Ti encapsulated Ag lines without affecting the barrier stability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2ebbc772f091a7abc497abb043912b07 https://doi.org/10.1016/s0924-4247(01)00912-8 Zobrazit plný text záznamu Full Text from ScienceDirect