Passivation of the facets of 980 nm GaAs pump lasers by a pulsed UV laser-assisted technique
| Autor: | Juan Jiménez, J. Perrière, C. Belouet, M. Bettiati, S. Kerboeuf, J.L. Gentner, E. Martin |
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| Rok vydání: | 1999 |
| Předmět: |
Catastrophic optical damage
Materials science Passivation Silicon business.industry chemistry.chemical_element Laser pumping Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention Semiconductor laser theory Optics chemistry law Materials Chemistry Electrical and Electronic Engineering business Quantum well Diode |
| Zdroj: | Journal of Electronic Materials. 28:83-90 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-999-0223-7 |
| Popis: | It is reported on the passivation of the mirror facets, opened in the air, of ridge waveguide InGaAs/GaAs/AlGaAs single quantum well (λ=980 nm) laser diodes. The passivation concept consists of two steps, namely, oxide removal by irradiation of the mirror facets with a pulsed KrF laser, immediately followed by the deposition of a thin silicon layer. The experimental arrangement (the process operation and the aging behavior-resistance to catastrophic optical damage) of the lasers thus treated are described. The structural modification of the laser facets, as probed by micro-Raman spectroscopy and Rutherford backscattering spectroscopy, and the calibration technique used to assess the rate of oxide removal are also presented. |
| Databáze: | OpenAIRE |
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