| Autor: |
Sergei V. Kalinin, Jan Paul, Stefan Müller, A. Kersch, Thomas Mikolajick, Uwe Schröder, Dominik Martin, Till Schlösser, S. Riedel, Tony Schenk, P. Polakowski, Johannes Müller, Thomas M. Arruda, Amit Kumar, R. van Bentum, Ekaterina Yurchuk, Konrad Seidel, K. Khullar, Wenke Weinreich, Roman Boschke, T. S. Boscke |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 IEEE International Electron Devices Meeting. |
| Popis: |
With the ability to engineer ferroelectricity in HfO2 thin films, manufacturable and highly scaled MFM capacitors and MFIS-FETs can be implemented into a CMOS-environment. NVM properties of the resulting devices are discussed and contrasted to existing perovskite based FRAM. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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