$\hbox{In}_{0.5}\hbox{Ga}_{0.5}\hbox{As}$-Based Metal–Oxide–Semiconductor Capacitor on GaAs Substrate Using Metal–Organic Chemical Vapor Deposition
| Autor: | H. W. Yu, Edward Yi Chang, Ching-Ting Lee, C. L. Nguyen, S. Y. Wang, Hai Dang Trinh, C. H. Hsu, Hong Quan Nguyen |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon business.industry Fermi level chemistry.chemical_element Chemical vapor deposition Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound symbols.namesake chemistry Indium phosphide symbols Electronic engineering Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Indium gallium arsenide Molecular beam epitaxy |
| Zdroj: | IEEE Transactions on Electron Devices. 60:235-240 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | We demonstrate the good-performance In0.5Ga0.5As-based metal-oxide-semiconductor capacitor (MOSCAP) on GaAs substrate using metal-organic chemical vapor deposition technique. In0.5Ga0.5As film grown on GaAs substrate is proved to be high quality with threading dislocation density as low as 106 cm-2. The performance of the MOSCAPs is comparable to that of In0.53Ga0.47As/InP-based devices grown by molecular beam epitaxy technique. The devices show a nice capacitance-voltage response, with small frequency dispersion. The parallel conductance contours show the free movement of Fermi level with the gate bias. Acceptable interface trap density Dit values of 5 × 1011-2 × 1012 eV-1 · cm-2 in the energy range of 0.64-0.52 eV above the InGaAs valence band maximum in In0.5Ga0.5As/GaAs MOSCAPs obtained by conductance methods were shown. |
| Databáze: | OpenAIRE |
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