| Autor: |
S. Z. Rahaman, Wei-Chung Lo, Yi-Hui Su, Shyh-Shyuan Sheu, Shih-Chieh Chang, Ding-Yeong Wang, Fang-Ming Chen, Jeng-Hua Wei, Chih-I Wu, Guan-Long Chen, Yu-Chen Hsin, Shan-Yi Yang, H. Y. Lee, Yi-Ching Kuo, Yao-Jen Chang, I-Jung Wang, Sih-Han Li |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA). |
| Popis: |
The large linear dynamic range tunnel magnetoresistance (TMR) sensors were designed and successfully fabricated in 8 inch Silicon process line for current / magnetic sensing applications. In this paper, the TMR sensors show their performances strongly depend on wafer etching conditions and aspect ratios (ARs) of magnetic tunnel junctions (MTJs). During the fine-tuning of etching conditions and AR of MTJs, the packaged TMR sensors have large linear dynamic range (> 200 Oe) and suitable characteristics to apply in current measurement system. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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