X-ray scattering study of hydrogen implantation in silicon

Autor:	Luciana Capello, Chrystelle Lagahe, François Rieutord, Nicolas Sousbie, Joël Eymery
Rok vydání:	2006
Předmět:	Materials science Hydrogen Silicon Annealing (metallurgy) business.industry Scattering X-ray General Physics and Astronomy chemistry.chemical_element Molecular physics Crystallography Semiconductor Ion implantation chemistry X-ray crystallography business
Zdroj:	Journal of Applied Physics. 99:103509
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.2198928
Popis:	The effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A comparison between different crystallographic orientation of the implanted silicon surface is then presented, namely, for ⟨100⟩, ⟨110⟩, and ⟨111⟩ orientations, showing a dependence that can be related to bond orientation. Effect of annealing on the stressed structure is finally described.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2e8d66a94b6a82cc6f2c657d8c090388 https://doi.org/10.1063/1.2198928 Zobrazit plný text záznamu