Implant‐damage isolation of InP and InGaAsP
| Autor: | C. J. Miner, I. V. Mitchell, R. Rousina, F. R. Shepherd, U. G. Akano |
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| Rok vydání: | 1993 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1016-1021 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.578806 |
| Popis: | The creation of high resistivity layers by ion implantation of doped InP and InGaAsP epilayers, and the potential of the implant‐isolation technique for the fabrication of InP‐based ridge waveguide lasers, have been investigated. InP and InGaAsP samples, doped with 5×1017 cm−3 Si or Zn, were implanted with multiple‐energy 4He or 16O. Ridge waveguide lasers, with ∼0.7 μm dielectric masks to protect the ridge, were implanted with 18O ions. In all cases, the implantation beam flux was maintained at 0.01 μA cm−2. Following 30 s rapid thermal annealing (RTA) in the temperature range 350–750 °C, the sheet resistivities of the InP and InGaAsP samples were determined using either a contactless eddy current or Hall effect measurements. The results show that in both InP and InGaAsP high resistivity layers (∼105 Ω/⧠) are produced by He or O implantation. The thermal stability of the implant‐induced isolation depends on the material, the doping type, and the ion dose. High sheet resistivity, stable against 30 s RTA, can be maintained for temperatures up to 550 °C, sufficient for device processing. For samples implanted to calculated (trim) defect concentrations of ∼4×1021 cm−3, p‐ to n‐type conductivity conversion was observed for both InP and InGaAsP. |
| Databáze: | OpenAIRE |
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