340-W Peak Power From a GaSb 2-$\mu$m Optically Pumped Semiconductor Laser (OPSL) Grown Mismatched on GaAs
| Autor: | C. P. Hains, Ganesh Balakrishnan, J. M. Yarborough, Jerome V. Moloney, Yushi Kaneda, Yi-Ying Lai, Stephan W. Koch, T. J. Rotter, Jörg Hader |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Resonance Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Gallium arsenide Power (physics) Semiconductor laser theory Optical pumping chemistry.chemical_compound Semiconductor Electricity generation Optics chemistry law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 22:1253-1255 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2010.2052596 |
| Popis: | A GaSb-based vertical external cavity laser at 2 μm was pumped by 100- to 160-ns pulses from a Nd : YAG laser at 1.064 μm operating at 1 kHz. It was shown that the output power scales with the pump spot diameter to the extent of our experiments. A peak output of over 340 W was obtained. |
| Databáze: | OpenAIRE |
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