Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT's with platinum buried gates
| Autor: | M. Kudo, Takuma Tanimoto, T. Nakamura, Akihisa Terano, Isao Ohbu, A. Kawai, S. Tanaka |
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| Rok vydání: | 1998 |
| Předmět: |
Power gain
Materials science business.industry Electrical engineering Linearity Biasing High-electron-mobility transistor Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Optoelectronics Linear amplifier Field-effect transistor Electrical and Electronic Engineering business Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 45:1176-1182 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.678503 |
| Popis: | Highly efficient enhance/depletion (E/D) dual-gate HEMT's for use in high-power linear amplifiers with a single biasing supply are demonstrated. These devices include platinum buried gates to realize a single biasing supply. A double-heterostructure and a GaAs/InGaAs/GaAs superlattice channel were adopted to obtain a good linearity and a large gain. An E/D dual-gate field effect transistors (FET) structure is also adopted to improve the gain and efficiency. High output power of 24 dBm, high power gain of 24 dB, and high power-added-efficiency of 46% for the gate width of 4-mm sample were obtained under conditions with a 1.5-GHz Japan Personal Digital Cellular (PDC) standard and with a +3.5 V single biasing supply. |
| Databáze: | OpenAIRE |
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