Ion trajectory distortion and profile tilt by surface charging in plasma etching
| Autor: | Sychyi Fang, James P. McVittie, Shigemi Murakawa |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Plasma etching
Physics and Astronomy (miscellaneous) Silicon Physics::Instrumentation and Detectors business.industry technology industry and agriculture chemistry.chemical_element Substrate (electronics) Computer Science::Other Optics Tilt (optics) chemistry Physics::Plasma Physics Etching (microfabrication) Gate oxide Optoelectronics Wafer Reactive-ion etching business |
| Zdroj: | Applied Physics Letters. 64:1558-1560 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.111864 |
| Popis: | Surface charging effects on etching profiles during silicon etching in a nonuniform plasma were investigated by scanning electron micrographs and plasma potential measurements. The distortion in ion trajectories caused by the surface charging was calculated by an ion lens simulator. A tilt in the etching profile was found in holes and trenches near a large etched area when an insulating mask such as photoresist or silicon dioxide was used. Ion trajectory calculations showed that this profile tilt was caused by the local electric field resulting from the potential difference between the charged mask surface and the electrically grounded silicon substrate. This profile result agrees well with gate oxide damage results which were also successfully explained by surface charging. |
| Databáze: | OpenAIRE |
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