Influence of RTP flash anneal ramp rates on lithography overlay performance on 300 mm integrated wafers

Autor:	G. Obermeier, D. Ganz, D. Graef, Steffen Frigge, Olaf Storbeck, M. Stadmuller, W. Lerch
Rok vydání:	2003
Předmět:	Materials science business.industry Extreme ultraviolet lithography Overlay law.invention Flash (manufacturing) law Electronic engineering Optoelectronics Wafer X-ray lithography Photolithography business Lithography Next-generation lithography
Zdroj:	2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
DOI:	10.1109/iit.2000.924114
Popis:	The influence of RTP with high ramp rates on lithography overlay distortion was investigated in this work using sub-quarter-micron technology on 300 mm wafers. The concentrations of interstitial oxygen was varied, as well as ramp rates and lamp correction tables used to optimise the across-wafer temperature uniformity. The influence of these parameters on the rapid thermal anneal (RTA) performance was studied. Wafer geometry and lithography overlay measurements where used to determine the impact of the material and RTA process parameters to lithography pattern shifts.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2e5e6b7679b84560ca6f1cca14b4cf93 https://doi.org/10.1109/iit.2000.924114 Zobrazit plný text záznamu