Advanced CMOS transistors with a novel HfSiON gate dielectric

Autor:	Rajesh Khamankar, Lancy Tsung, Mark R. Visokay, M. Douglas, A. Shanware, Luigi Colombo, M. J. Bevan, R. T. Laaksonen, R. Kuan, Tad Grider, Haowen Bu, J. McPherson, James J. Chambers, Antonio L. P. Rotondaro
Rok vydání:	2003
Předmět:	Permittivity Electron mobility Materials science business.industry Gate dielectric Transistor Oxide Dielectric law.invention chemistry.chemical_compound CMOS chemistry law MOSFET Optoelectronics business
Zdroj:	2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
DOI:	10.1109/vlsit.2002.1015428
Popis:	We report for the first time on short channel transistors fabricated using HfSiON, a new high-k gate dielectric material. HfSiON has superior electrical characteristics such as low leakage current relative to SiO/sub 2/, low interfacial trap density, electron and hole carrier mobilities /spl sim/80% of the universal curve at E/sub eff/>0.8 MV/cm and scalability to equivalent oxide thicknesses of less than 10 /spl Aring/. This material is also thermally stable up to 1100/spl deg/C in contact with poly Si, and exhibits boron blocking significantly better than SiO/sub 2/ and SiON. The results indicate that this material is a promising high-k gate dielectric with good transistor characteristics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2e5c8ec14031857e428673f9341b6f3a https://doi.org/10.1109/vlsit.2002.1015428 Zobrazit plný text záznamu