New Lines in High Resolution IR Luminescence Spectra of SiC Single Crystals of the 4H and 6H Polytypes

Autor:	N. N. Novikova, S. A. Klimin, M. N. Mayakova, Kirill N. Boldyrev, B. N. Mavrin, V. M. Khnykov, D. D. Gutsenko
Rok vydání:	2020
Předmět:	010302 applied physics Range (particle radiation) Materials science Absorption spectroscopy business.industry Analytical chemistry High resolution Luminescence spectra Laser 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention 010309 optics chemistry.chemical_compound chemistry law 0103 physical sciences Silicon carbide Photonics Luminescence business
Zdroj:	Optics and Spectroscopy. 128:1374-1378
ISSN:	1562-6911 0030-400X
DOI:	10.1134/s0030400x20090040
Popis:	We have studied high-resolution low-temperature IR luminescence and absorption spectra of undoped high-quality SiC single crystals of the 4H and 6H hexagonal modifications. Narrow lines with a width of smaller than 0.2 cm–1 have been revealed, with some of which being observed for the first time. We have found that some of the lines in the 4H and 6H modifications have similar structures; however, the lines in SiC-4H are shifted to the high-energy part of the spectrum by ~180 cm–1. For the most intense quartet in the range of 1.3 µm, we have succeeded in constructing the energy structure of levels for both the 4H modification and the 6H modification based on their luminescence and absorption spectra.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2e58845127c4803b06521c131bc9b66a https://doi.org/10.1134/s0030400x20090040 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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