| Popis: |
Demand for mask process correction (MPC) is growing facing the 14nm era. We have developed model based MPC and can generate mask contours by using this mask process model. This mask process model consists of EB (development) and etch, which employs a threshold (level set) model and a variable bias model respectively. The model calibration tool accepts both CD measurement results and SEM images. The simulation can generate mask image (contour), runs with distributed computing resources, and has scalable performance. The contour simulation shows the accuracy of the MPC correction visually and provides comprehensive information about hot spots in mask fabrication. Additionally, it is possible to improve lithography simulation quality by providing a simulated mask contour. In this paper, accuracy and computational performance of mask process simulation are shown. The focus is on the difference between the calibration methods using CDs or images. |
