Oxygen precipitation in Czochralski grown silicon heat treated at 550 °C
| Autor: | M J Binns, J Y Cheung, S. Rycroft, R. J. Stewart, S. Messoloras |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Silicon Precipitation (chemistry) Annealing (metallurgy) Scattering Analytical chemistry chemistry.chemical_element Neutron scattering Condensed Matter Physics Microstructure Oxygen Electronic Optical and Magnetic Materials chemistry Materials Chemistry Electrical and Electronic Engineering Small-angle scattering |
| Zdroj: | Semiconductor Science and Technology. 15:782-788 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/15/7/321 |
| Popis: | The diffusion of oxygen in silicon at 550 °C is studied using small-angle neutron scattering (SANS) and the diffusion coefficient, D, calculated from Ham's theory is found to be ~10 times higher than that expected by extrapolation of higher- and lower-temperature data (D = 0.13exp (-2.53 eV kT-1) cm2 s-1). This result confirms previous observations of enhanced diffusion at intermediate temperatures (400-650 °C) although the magnitude of the enhancement we find is much smaller than that reported by some others. At 550 °C the precipitates observed initially by SANS appear to be spherical. For longer annealing times, the scattering becomes anisotropic, suggesting that a cuboidal morphology is developing. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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