Triple-Junction GaInP/GaAs/Ge Solar Cells With an AZO Transparent Electrode and ZnO Nanowires
| Autor: | Shoou-Jinn Chang, Shuguang Li, Chun-Hsing Liu, Kin-Tak Lam, Jei-Li Hou, Sheng Po Chang, Ting-Jen Hsueh |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Fabrication
Materials science business.industry Energy conversion efficiency Contact resistance Nanowire chemistry.chemical_element Germanium Condensed Matter Physics Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Electrode Optoelectronics Electrical and Electronic Engineering business Ohmic contact |
| Zdroj: | IEEE Journal of Photovoltaics. 3:991-996 |
| ISSN: | 2156-3403 2156-3381 |
| DOI: | 10.1109/jphotov.2013.2258192 |
| Popis: | In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF2/Ta2O5. By inserting a 4-nm-thick AuGeNi between AZO and n+ -AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 × 10-5 Ω·cm2. Furthermore, it was found that the ZnO NWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|