New Approach for Reducing the Out of Band effect and Outgassing by Applying Top Coat Materials
| Autor: | Noriaki Fujitani, Ryuji Onishi, Bang-Ching Ho, Rikimaru Sakamoto |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | ECS Transactions. 52:259-265 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/05201.0259ecst |
| Popis: | EUV lithography is one of the next generation lithography candidates for hp22nm and beyond. However the light source, tools, masks and resists are still the key issues for the EUV lithography. For the development of the EUV light source, the low power is one of the critical issues that will make the low throughput. Another one is the Out of Band (OoB) light existing in the EUV source. OoB is concerned to be the cause of deterioration of the lithography performance. The outgassing from resist is another big issue for the EUV lithography, and how to prevent and keep the cleanness of exposure tool is very important topic. The OoB effect and outgassing from resist issues must be resolved toward the high volume manufacturing. In order to resolve these critical issues, applying top coat material can be the promising candidate process. The key characteristics for top coat material are reducing the OoB effect, preventing the outgassing form resist as barrier layer, and controlling the resist profile and process window. The material is called OBPL (Outgass and OoB Protection Layer). This paper describes the material design having the high absorption in OoB range and high transmittance for 13.5nm wavelength, and having the outgassing barrier performance to reduce the outgassing from resist. Finally we will study the lithography performance with top coat material. |
| Databáze: | OpenAIRE |
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