Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium

Autor:	R. Schulz, T. Bachmann, S. Schippel, E. Glaser, U. Richter
Rok vydání:	1995
Předmět:	Nuclear and High Energy Physics Materials science Ion beam Condensed matter physics chemistry.chemical_element Germanium Activation energy Epitaxy Ion Amorphous solid law.invention Crystallography chemistry law Surface layer Crystallization Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 106:350-354
ISSN:	0168-583X
DOI:	10.1016/0168-583x(96)80029-2
Popis:	〈100〉 and 〈111〉-Ge single crystals were preamorphized in a thin surface layer using 50 keV or 85 keV N+ ions. Ion beam induced epitaxial crystallization (IBIEC) and interfacial amorphization (IBIIA) at the amorphous/crystalline interface were studied using different kinds of high energy ion beams. The crystallization rate for the 〈100〉-Ge is about 1.5 times higher than that for 〈111〉-Ge. The total recrystallised thickness depends mainly on the nuclear energy deposition and the irradiation temperature. Interfacial amorphization is detected in Ge for the first time. Cross section TEM micrographs show a sharp amorphous/crystalline interface for both IBIEC and IBIIA. The fit of the experimental data yields an activation energy of 0.82 eV for IBIEC and 1.16 eV for IBIIA.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2e1f42d0ec08bb4ff07e7e38bcb3e625 https://doi.org/10.1016/0168-583x(96)80029-2 Zobrazit plný text záznamu Full Text from ScienceDirect