Uniaxial stress studies on the dominant nitrogen defect in silicon and germanium

Autor:	B. Bech Nielsen, F. Berg Rasmussen
Rok vydání:	1996
Předmět:	Materials science Silicon Mechanical Engineering chemistry.chemical_element Diamond Germanium Strained silicon engineering.material Condensed Matter Physics Microstructure Nitrogen Molecular physics Stress (mechanics) Crystallography chemistry Mechanics of Materials Molecular vibration engineering General Materials Science
Zdroj:	Materials Science and Engineering: B. 36:241-245
ISSN:	0921-5107
Popis:	The microstructure of the dominant nitrogen pair defect in silicon and germanium has been studied by uniaxial stress measurements on local vibrational modes ascribed to the pair. It is shown directly that the pair in germanium has a different structure than that of the well-known nitrogen pair in diamond. All the data are fully consistent with the recently proposed antiparallel model of the pair in both silicon and germanium.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2e0f7698f8ca0a60e716abd10305da2c https://doi.org/10.1016/0921-5107(95)01257-5 Zobrazit plný text záznamu Full Text from ScienceDirect