Optimization of the CIGS solar cell by adding a heavily doped layer and an intrinsic layer at absorber layer
| Autor: | Neda Rezaie, Fatemeh Tahvilzadeh |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Energy conversion efficiency Doping 02 engineering and technology Electron Quantum dot solar cell 021001 nanoscience & nanotechnology 01 natural sciences Copper indium gallium selenide solar cells Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Electric field 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Layer (electronics) Computer communication networks |
| Zdroj: | Optical and Quantum Electronics. 48 |
| ISSN: | 1572-817X 0306-8919 |
| DOI: | 10.1007/s11082-016-0380-x |
| Popis: | Solar conversion efficiency of CIGS solar cells is investigated in this work. It is found that the efficiency can be improved if heavily doped layer is added to intrinsic absorber layer in CIGS solar cells. On the other hand, the presence of an interface between the high and low doped regions behaves like a p–n junction. As a result, an electric field for the minority electrons is created that decreases surface recombination in rear surface. In order to improve the parameters of CIGS solar cell, we investigated the effect of different thicknesses and doping concentrations of i-layer and p+ layer in the absorber layer. Finally, it had been found that the ZnO/CdS/i-CIGS/p+-CIGS structure in which at the thickness of i and p+ layers with 10 nm and 2.99 µm will have an efficiency ≈3.1 % higher than that of the basic CIGS cell. |
| Databáze: | OpenAIRE |
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