Investigation of the Dopant Distribution in thin Epitaxial Silicon Layers by Means of Spreading Resistance Probe and Secondary Ion Mass Spectrometry

Autor:	Ron Choma, Subramania Krishnakumar, Catherine Hartford, Jack H. Linn, Greg Moran, Ilya Karpov
Rok vydání:	1997
Předmět:	Secondary ion mass spectrometry Materials science Spreading resistance profiling chemistry Antimony Dopant Electrical resistivity and conductivity Analytical chemistry chemistry.chemical_element Chemical vapor deposition Boron Arsenic
Zdroj:	MRS Proceedings. 500
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-500-75
Popis:	In this paper, we examine the dopant distributions in 1.8 to 4 micron-thick boron- and phosphorus-doped epitaxial silicon layers. These layers were grown by chemical vapor deposition (CVD) on arsenic-, antimony-, or boron-doped (100)- and (111)-oriented substrates. We performed doping profile studies by means of local resistivity measurements using a spreading resistance probe (SRP). Chemical profiles of the dopants were also obtained using secondary ion mass spectrometry (SIMS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2e0324d956862a6dd50c19f48140dcc5 https://doi.org/10.1557/proc-500-75 Zobrazit plný text záznamu Full text from SpringerLink