A Comprehensive Evaluation of Drain-side Layout Topologies on the Power nLDMOS ESD/LU Reliabilities
| Autor: | Shen-Li Chen, Min-Hua Lee |
|---|---|
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | Research Journal of Applied Sciences, Engineering and Technology. 8:496-502 |
| ISSN: | 2040-7467 2040-7459 |
| DOI: | 10.19026/rjaset.8.998 |
| Popis: | The non-uniform turned-on and low holding-Voltage (V h) issues are seriously impacted the reliability abilities of an n-channel lateral-diffused power MOSFET (nLDMOS). Therefore, basing on the drain Field-Oxide Device (FOD) structure of an nLDMOS and changing the thin-Oxide Definition (OD) topology for contacts located in the middle region of drain-side will be investigated in this study. The OD structure will renew as some dotted-OD manners. Experimental results show that the dotted-OD layout has a higher Electrostatic Discharge (ESD) capability than that of the FOD structure and the layout type of dotted-OD will affect the ESD capability of an HV component. A uniformly distributed type of dotted-OD will have a highest I t2 value, the I t2 value is increased about 12% as compared with the Ref. traditional nLDMOS. And, the V h value will increase with the contacts number increasing within the dotted-OD, which is increased about 28.2% of a dotOD46 device as compared with the traditional nLDMOS. Furthermore, as adding an FODs structure combined with a uniform dotted-OD structure in the drain side will be haven a high ESD capability (about 5.9% increasing) and high LU immunity (25.8% increasing) compared with the traditional nLDMOS DUT. Therefore, it is good both for ESD and Latch-Up (LU) reliability considerations. |
| Databáze: | OpenAIRE |
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