(Invited) Resistive Memories (RRAM) Variability: Challenges and Solutions

Autor:	Philippe Blaise, Cecile Nail, E. Nowak, Gabriel Molas, Jean Coignus, Carlo Cagli, Gilbert Sassine, Diego Alfaro Robayo, Jean-Francois Nodin
Rok vydání:	2018
Předmět:	Switching time Resistive touchscreen Bridging (networking) Reliability (semiconductor) Computer science Electronic engineering Memory operation Resistive random-access memory
Zdroj:	ECS Transactions. 86:35-47
ISSN:	1938-5862 1938-6737
DOI:	10.1149/08603.0035ecst
Popis:	In this work, we address Resistive RAM (RRAM) variability. To this aim, we investigate various RRAM technologies (Oxide RAM and Conductive Bridging RAM), integrated on kb 1T1R arrays. Impact of variability is evaluated and discussed for various RRAM features: window margin, switching speed, consumption, retention and endurance. Solutions are proposed in order to improve overall RRAM performances. Optimized programming schemes are discussed. Importance of controlling the memory operation and programming energy to improve RRAM reliability is put in evidence.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2dff6491f3ab75a907081fd621a3b4bf https://doi.org/10.1149/08603.0035ecst Zobrazit plný text záznamu