Effect of grain microstructure on P diffusion in polycrystalline-on-single crystal silicon systems
| Autor: | J. C. Norberg, B. J. Mulvaney, K. H. Park, Sanjay K. Banerjee, T. C. Smith, Shubneesh Batra, G. Lux, J. K. Elliott, C. L. Kirschbaum |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon Anomalous diffusion Annealing (metallurgy) technology industry and agriculture Nanocrystalline silicon Mineralogy chemistry.chemical_element Condensed Matter Physics Microstructure Electronic Optical and Magnetic Materials chemistry Chemical physics Materials Chemistry Grain boundary diffusion coefficient Grain boundary Crystallite Electrical and Electronic Engineering |
| Zdroj: | Journal of Electronic Materials. 21:227-231 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02655841 |
| Popis: | Grain microstructure has a major impact on diffusion of P in polysilicon-on-single crystal silicon systems both within the polysilicon layer and inside the single crystal silicon substrate. During annealing, P diffuses very rapidly along grain boundaries in the polysilicon layer to the interface, where it undergoes very fast diffusion laterally along the polysilicon-single crystal silicon interface, followed subsequently by slow indiffusion into the underlying substrate. However, the extrapolated Secondary Ion Mass Spectrometry profiles for P reveal a discontinuity at the interface, which is caused by anomalous diffusion behavior similar to the well known “kink” effect observed in single crystal silicon during P diffusion. The high diffusivity tail region is also much less pronounced for polysilicon-on-silicon systems compared to single crystal silicon due to a reduction of interstitial supersaturation in the substrate. This reduction is believed to result from the absorption of interstitials by the grain boundaries which act as sinks for the excess interstitials. |
| Databáze: | OpenAIRE |
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