Meeting Si challengeis: nano technology development in China

Autor:	P. Sun, John Chen, Hanming Wu, Dawei Gao, Bei Zhu, S. Chen, Jay Ning, S. Yang, Hongxiang Mo
Rok vydání:	2005
Předmět:	Mainland China Interconnection Leading edge Materials science Silicon Transistor chemistry.chemical_element Strained silicon Nanotechnology law.invention chemistry law Gate oxide Nano Hardware_INTEGRATEDCIRCUITS
Zdroj:	Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
DOI:	10.1109/icsict.2004.1435103
Popis:	Leading edge technologies are essential lo the foundry success in mainland China. In this paper, 90 nm and beyond technology with 1.2 nm physical gate oxide, strained silicon, NiSi and low-k Cu interconnection for high performance logic is presented. A highly manufacturable technique for improving transistor performance is reported.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2df30cd6a9185d6aa4bd34516b6bd44d https://doi.org/10.1109/icsict.2004.1435103 Zobrazit plný text záznamu