| Autor: |
Rajashree Naik, Mukta Behera, N. C. Mishra |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
DAE SOLID STATE PHYSICS SYMPOSIUM 2018. |
| ISSN: |
0094-243X |
| Popis: |
In the present work, we probe into the phase transition of amorphous Bi10As40Se50 to a crystalline one upon thermal annealing. The Bi10As40Se50 thin films were prepared through thermal evaporation method and were annealed at 130° for 5h. The as-prepared and annealed films were characterized by XRD, FESEM and Raman spectroscopy. X-ray diffraction study revealed the amorphous nature of the as-prepared film and Bi3Se4 crystallite phase formation in the annealed film. This clearly indicates annealing induced diffusion of Bi into As2Se3 and hence the formation of Bi3Se4 phase. FESEM images show the smooth and homogeneous surface for the Bi10As40Se50 film whereas the annealed film shows these crystallites covers the surface. The Raman spectra shows a broad band corresponds to AsSe3 unit and a raman peak of bismuth selenide in the asprepared film whichshows shifting in case of annealed film. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
