Nonthermal Mechanism of Defect Formation in the CdHgTe Semiconductor on Exposure to Soft X-rays

Autor:	O. B. Anan’in, V. G. Sredin, A.P. Melekhov, R. Sh. Ramakoti, I. A. Gerasimov, G. S. Bogdanov, Pavel Dzhumaev, I. K. Novikov, I. V. Frolova
Rok vydání:	2019
Předmět:	Physics Nuclear and High Energy Physics business.industry Soft X-rays Plasma Radiation Laser Concentrator Atomic and Molecular Physics and Optics law.invention Semiconductor law Optoelectronics Irradiation business Layer (electronics)
Zdroj:	Physics of Atomic Nuclei. 82:1571-1575
ISSN:	1562-692X 1063-7788
Popis:	The effect of irradiation with soft X-rays produced by a laser plasma source equipped with an X-ray concentrator on the properties of the CdHgTe semiconductor are investigated. For this purpose, the mass concentration of atoms in the near-surface layer of the material is measured. It is demonstrated that the action of soft X-ray radiation leads to change in the solid-solution composition at the surface via a nonthermal mechanism and generates surface defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2de0d596ffc7b15ff530aadb3c4650d4 https://doi.org/10.1134/s1063778819110188 Zobrazit plný text záznamu Plný text ve formátu PDF