A Fully Integrated FVF LDO With Enhanced Full-Spectrum Power Supply Rejection
| Autor: | Yan Lu, Rui P. Martins, Chenchang Zhan, Guigang Cai |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Physics
business.industry 020208 electrical & electronic engineering Bandwidth (signal processing) Buffer amplifier Electrical engineering Response time Biasing 02 engineering and technology law.invention Capacitor CMOS law 0202 electrical engineering electronic engineering information engineering Transient response Electrical and Electronic Engineering business Electronic circuit |
| Zdroj: | IEEE Transactions on Power Electronics. 36:4326-4337 |
| ISSN: | 1941-0107 0885-8993 |
| Popis: | This article presents a fully integrated flipped voltage follower (FVF) based low-dropout (LDO) regulator with enhanced full-spectrum power supply rejection (PSR) and unity-gain bandwidth over 400MHz for noise-sensitive circuits. Following the study of three types of FVF LDO's PSR performances, we propose a novel FVF LDO with a low-gain fast loop-1 and a high-gain slow loop-2. In prior FVF LDOs, their PSRs are either full-spectrum, or not, but with low PSR at low frequency. In this article, we fully utilize both dc gains of loop-1 and loop-2 for the low-frequency PSR, while the high-frequency PSR remains unchanged. In addition, we use dynamic compensation to push the loop-2's UGB to higher frequency for a better PSR bandwidth. This work, fabricated in 65 nm complementary metal oxide semiconductor (CMOS), with 1.2-V input and 1-V output, exhibits a measured quiescent current ( IQ ) varying from 27 to 82 μ A for a load current I LOAD between 5 μ A and 20 mA. The circuit achieves a low frequency PSR of –58 dB with the worst full-spectrum PSR of –9 dB in 20 mA I LOAD with a 300 pF on-chip output capacitor. Further, with an UGB over 400 MHz, the proposed FVF LDO reaches 0.9 ns response time when ILOAD changes between 100 μ A and 20 mA with edge times less than 0.8 ns. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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