Surface preparation of AlN substrates

Autor: Xiufang Chen, X. G. Xu, Martin Albrecht, Dietmar Siche, Jürgen Wollweber, Carsten Hartmann
Rok vydání: 2008
Předmět:
Zdroj: Crystal Research and Technology. 43:651-655
ISSN: 1521-4079
0232-1300
Popis: The Al-polar surfaces of AlN wafers cut from physical vapor transport grown crystals were lapped and polished. Polishing procedures were developed to produce surfaces for epitaxial growth. The surface scratches and subsurface damage caused by mechanical polishing were removed by a final chemical mechanical polishing (CMP) process, which yielded a perfect surface ready for epitaxial growth. After CMP the average root mean square surface roughness on a 5 µm × 5 µm area was 0.1 nm. Characterization of the polished surfaces by electron back scatter diffraction and cathodoluminescence showed no subsurface damage. The difference of orientation dependent material removal rate during CMP went up with the increase of the misorientation from (0001) surface. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
Externí odkaz: