10.3%-efficient submicron-thick Cu(In,Ga)Se2 solar cells with absorber fabricated by sputtering In2Se3, CuGaSe2 and Cu2Se targets
| Autor: | Yixuan Wu, Guoan Ren, Ming Zhao, Rujun Sun, Xiao Peng, Xunyan Lv, Yaowei Wei, Leng Zhang, Daming Zhuang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper indium gallium selenide solar cells Surfaces Coatings and Films Smooth surface Crystallinity chemistry Sputtering 0103 physical sciences Optoelectronics Thin film Gallium 0210 nano-technology business |
| Zdroj: | Applied Surface Science. 442:308-312 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2018.02.172 |
| Popis: | We reported a new method to fabricate submicron-thick CIGS with smooth surface by sputtering In2Se3, CuGaSe2 and Cu2Se targets with post-selenization. The influence of gallium content on the properties of CIGS thin film was evaluated by the crystallinity and the cells performance. The most suitable value of Ga content in our submicron-thick CIGS is 0.32 and cells based on it demonstrated the highest efficiency of 10.3%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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