Mo1–xWxSe2-Based Schottky Junction Photovoltaic Cells
| Autor: | Hwan Young Choi, Donggun Oh, Nara Lee, Sum Gyun Yi, Young Jai Choi, Sung Hyun Kim, Sungjin Park, Kyung Hwa Yoo |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Yield (engineering) business.industry Graphene Schottky barrier Energy conversion efficiency Photovoltaic system Schottky diode 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Rectification law Electrode Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 8:33811-33820 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.6b11768 |
| Popis: | We developed Schottky junction photovoltaic cells based on multilayer Mo1–xWxSe2 with x = 0, 0.5, and 1. To generate built-in potentials, Pd and Al were used as the source and drain electrodes in a lateral structure, and Pd and graphene were used as the bottom and top electrodes in a vertical structure. These devices exhibited gate-tunable diode-like current rectification and photovoltaic responses. Mo0.5W0.5Se2 Schottky diodes with Pd and Al electrodes exhibited higher photovoltaic efficiency than MoSe2 and WSe2 devices with Pd and Al electrodes, likely because of the greater adjusted band alignment in Mo0.5W0.5Se2 devices. Furthermore, we showed that Mo0.5W0.5Se2-based vertical Schottky diodes yield a power conversion efficiency of ∼16% under 532 nm light and ∼13% under a standard air mass 1.5 spectrum, demonstrating their remarkable potential for photovoltaic applications. |
| Databáze: | OpenAIRE |
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