Epitaxial Lateral Overgrowth of GaN on Si (111) Substrates Using High-Dose, N+Ion Implantation

Autor:	Jong-Hyeob Baek, Kwangtaek Lee, Young-Moon Yu, Samseok Jang, Jaesang Lee, Dongjin Byun, Bum-Joon Kim, Seung-Jae Lee, Junggeun Jhin
Rok vydání:	2010
Předmět:	Materials science business.industry Process Chemistry and Technology Cathodoluminescence Surfaces and Interfaces General Chemistry Substrate (electronics) Epitaxy Crystallography Ion implantation Microscopy Optoelectronics Wafer Crystallite business Layer (electronics)
Zdroj:	Chemical Vapor Deposition. 16:80-84
ISSN:	1521-3862 0948-1907
Popis:	An epitaxial, laterally-overgrown (ELOG) GaN layer is deposited on a Si(111) substrate using high-dose, N+ ion implantation. ELOG GaN is deposited on a Si(111) wafer with implantation stripes by metal-organic (MO) CVD. The GaN layer on the N+ ion-implanted region is polycrystalline and acts as a mask for the ELOG process. This is attributed to the growth rate of the polycrystalline GaN being much slower than that of epitaxial GaN. After 120 min, complete coalescence is achieved with a flat surface. Scanning cathodoluminescence (CL) microscopy and high resolution X-ray diffraction (HRXRD) confirm the high optical and crystalline quality of the ELOG GaN layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2dc9aa34a3bee31795b28cfda04cff19 https://doi.org/10.1002/cvde.200906807 Zobrazit plný text záznamu Plný text