Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC
| Autor: | Eric A. Stach, Fangzhen Wu, Gil Yong Chung, Balaji Raghothamachar, Kim Kisslinger, Yu Yang, Michael Dudley, Huanhuan Wang, Mark J. Loboda, Dong Su, Stephan G. Mueller, Li Hua Zhang, Edward K. Sanchez, Darren Hansen, Jianqiu Guo |
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| Rok vydání: | 2015 |
| Předmět: |
geography
geography.geographical_feature_category Materials science Mechanical Engineering Nucleation Stacking Fault (geology) Condensed Matter Physics Molecular physics Synchrotron law.invention Crystal Crystallography Mechanics of Materials law Partial dislocations General Materials Science High-resolution transmission electron microscopy Stacking fault |
| Zdroj: | Materials Science Forum. :85-89 |
| ISSN: | 1662-9752 |
| Popis: | Synchrotron white beam x-ray topography (SWBXT), synchrotron monochromatic beam x-ray topography (SMBXT), and high resolution transmission electron microscopy (HRTEM) studies have been carried out on stacking faults in PVT grown 4H-SiC crystal. Their fault vectors were determined by SWBXT to be 1/3, 1/2, 1/6, 1/12, 1/12. HRTEM studies reveal their similarity in stacking sequences as limited numbers of bilayers of 6H polytype structure. Simulation results of the two partial dislocations associated with the stacking faults in SMBXT images reveal the opposite sign nature of their Burgers vectors. A mechanism for stacking fault formation via 2D nucleation is postulated. |
| Databáze: | OpenAIRE |
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