Cold Silicon Preamorphization Implant and Presilicide Sulfur Implant for Advanced Nickel Silicide Contacts

Autor: Lye Hing Chua, Thirumal Thanigaivelan, Qian Zhou, Yi Tong, Lan Xiang Wang, Todd Henry, Kain Lu Low, Yee-Chia Yeo
Rok vydání: 2014
Předmět:
Zdroj: IEEE Transactions on Electron Devices. 61:3499-3506
ISSN: 1557-9646
0018-9383
DOI: 10.1109/ted.2014.2347705
Popis: We report the first demonstration of a nickel silicide (NiSi) contact formation technique using cold silicon (Si) preamorphization implant (PAI) combined with presilicide sulfur (S) implant. The cold Si PAI suppresses the agglomeration of NiSi film at elevated temperatures. Presilicide S implant and its segregation at the interface of NiSi and n-type Si (n-Si) after silicidation significantly lowers the effective Schottky barrier height (Φ n B ) for electrons at the NiSi/n-Si contact. The S atoms in Si could be modeled as donor-like traps near the NiSi/n-Si interface, and a simulation study was performed to explain the reduction of Φ n B caused by S.
Databáze: OpenAIRE
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