A High-Performance Polysilicon Thin-Film Transistor Built on a Trenched Body
| Autor: | Jyi-Tsong Lin, Kuo-Dong Huang |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Fabrication
Materials science Silicon business.industry Transistor Electrical engineering chemistry.chemical_element Electronic Optical and Magnetic Materials Threshold voltage law.invention chemistry Thin-film transistor law Trench Optoelectronics Breakdown voltage Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices. 55:2417-2422 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2008.927667 |
| Popis: | In this paper, a high-performance polysilicon thin-film transistor (poly-Si TFT) with a trenched body is proposed, fabricated, and studied. This new trenched TFT can be easily produced by filling and etch-back technology without destroying the channel film quality. The addition of the body trench is found to reduce the off-state leakage current by 70% on average, because the trench induces a carrier scattering effect in the poly-Si grain-boundary traps, thereby affecting the leakage path. Although the off-state current is substantially reduced, the on-state current is comparable with that of a conventional TFT. Our multiple-trenched-body TFT is also shown to improve the breakdown voltage by 11%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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