Improvements of Fourier transform phase‐modulated ellipsometry

Autor:	S. Vallon, Bernard Drevillon, E. Compain
Rok vydání:	1995
Předmět:	Silicon business.industry Infrared Phase (waves) chemistry.chemical_element chemistry.chemical_compound symbols.namesake Hydrofluoric acid Fourier transform Optics chemistry Ellipsometry symbols Optoelectronics Wafer business Instrumentation Phase modulation
Zdroj:	Review of Scientific Instruments. 66:3269-3272
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1145492
Popis:	Improvements of the Fourier transform phase‐modulated ellipsometry (FTPME) technique are described. Measurements performed on the silicon oxide‐silicon wafer system are used to illustrate FTPME performances. In particular, the chemistry of Si(100) and Si(111) surfaces after hydrofluoric acid (HF) treatment is investigated. Precisions on the ellipsometric angles Ψ and Δ of ±0.003° and ±0.008°, respectively, are obtained in the SiHn stretching mode region. SiH and SiH2 vibrations are identified at the Si surface revealing that submonolayer sensitivity can be achieved with FTPME. As a consequence, FTPME appears as a promising technique to perform detailed studies of interface formation and thin‐film growth.
Databáze:	OpenAIRE
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