Thermomechanical Failure Analysis of Through-Silicon Via Interface Using a Shear-Lag Model With Cohesive Zone

Autor:	Paul S. Ho, Tengfei Jiang, Jay Im, Rui Huang, Suk-Kyu Ryu
Rok vydání:	2014
Předmět:	Cohesive zone model Materials science Interfacial delamination Through-silicon via Shear (geology) Lag Extrusion Electrical and Electronic Engineering Composite material Safety Risk Reliability and Quality Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Device and Materials Reliability. 14:318-326
ISSN:	1558-2574 1530-4388
Popis:	An analytical approach to predict initiation and growth of interfacial delamination in the through-silicon via structure is developed by combining a cohesive zone model with a shear-lag model. Two critical temperatures are predicted for damage initiation and fracture initiation, respectively. It is found that via extrusion significantly increases beyond the second critical temperature. The dependence of the critical temperatures on the material/interfacial properties, as well as the via size (diameter and height), is discussed. In parallel with the analytical approach, finite-element models with cohesive interface elements are employed to numerically simulate the initiation and the progression of interfacial delamination. The numerical results are in good agreement with the analytical solution, and both are qualitatively consistent with reported experimental findings by others.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d9856ab9d597e5d4e51ac2a74a7baaf https://doi.org/10.1109/tdmr.2013.2261300 Zobrazit plný text záznamu