High-power external-cavity AlGaAs/GaAs/InGaAs quantum-dimensional heterolasers (λ = 1.06 μm)
| Autor: | A. G. Deryagin, D. A. Vinokurov, I. S. Tarasov, G. S. Sokolovskiĭ, V. I. Kuchinskiĭ, V. V. Dyudelev, A. V. Lyutetskiĭ, Nikita A. Pikhtin, A. L. Stankevich |
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| Rok vydání: | 2008 |
| Předmět: | |
| Zdroj: | Technical Physics Letters. 34:187-189 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785008030036 |
| Popis: | Use of an external cavity with a grating ensures effective narrowing of the linewidth (~0.35 nm) of a high-power multimode semiconductor laser with a broad (100 µ m) stripe contact. An output power of up to 550 mW has been reached with experimental external-grating-cavity laser diodes. It is demonstrated that a 3-mm-long multimode laser diode based on a quantum-dimensional AlGaAs/GaAs/InGaAs heterostructure ( λ = 1.06 µ m) can be used with a directly pumped PPLN crystal waveguide to obtain second-harmonic radiation with λ = 0.532 µ m. |
| Databáze: | OpenAIRE |
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