Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy
| Autor: | Yutaka Oyama, Toshio Kochiya, Jun-ichi Nishizawa, Maki Sugai |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Supersaturation
Materials science Silicon Scanning electron microscope business.industry Metals and Alloys chemistry.chemical_element Heterojunction Crystal growth Surfaces and Interfaces Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Crystallography chemistry.chemical_compound chemistry Etch pit density Materials Chemistry Indium phosphide Optoelectronics business |
| Zdroj: | Thin Solid Films. 515:4838-4842 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2006.11.041 |
| Popis: | Area selective epitaxy (ASE) of InP was performed by liquid phase epitaxy on Si (100) substrates without the use of buffer layers. At the start of epitaxy, the growth temperature was rapidly lowered to obtain high supersaturation. Epitaxial growth was then carried out at constant temperature. While small InP nuclei were observed in the broader open areas, ASE layers and layers showing slight epitaxial lateral overgrowth were formed in the narrow openings. Etch pit density of the InP ASE layers on Si is dependent on the length of open seed region and X-ray diffraction results indicate that the lattice strain in the InP nuclei on the Si substrate was fully relaxed. |
| Databáze: | OpenAIRE |
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