Growth of Epitaxial 2H-silicon Carbide by Pulsed Laser Deposition

Autor:	David L. Johnson, Joseph D. Warner, Pirouz Pirouz, Nancy D. Piltch, Hemasiri Vithana, Martin O. Patton, Jinwei Yang, Mark A. Stan
Rok vydání:	1994
Předmět:	Auger electron spectroscopy Laser ablation Materials science Excimer laser business.industry medicine.medical_treatment Epitaxy Pulsed laser deposition chemistry.chemical_compound chemistry medicine Silicon carbide Optoelectronics Wafer business High-resolution transmission electron microscopy
Zdroj:	MRS Proceedings. 339
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-339-423
Popis:	Silicon carbide films have been grown on 6H-SiC (0001) and Si (001) wafers by laser ablation using an excimer laser. The films were deposited at heater plate temperatures between 970° C to 1270° C. Film composition, morphology and polytypism were determined by Auger electron spectroscopy, atomic force microscopy and high resolution transmission electron microscopy (TEM). In the course of these experiments growth of 2H-SiC on 6H-SiC was observed at the highest heater plate temperatures. Cross-sectional TEM images clearly show the symmetry of a film grown at 1270° C as c-axis oriented 2H-SiC containing columnar grains with average diameter of 20 nm and length of 100 nm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d565e6cf08ef69e938fb82ac93f1096 https://doi.org/10.1557/proc-339-423 Zobrazit plný text záznamu Full text from SpringerLink