| Autor: |
K. R. Udayakumar, A. Haider, M. Depner, Theodore S. Moise, Sudhir K. Madan, K. Boku, J. Eliason, Hugh P. McAdams, R. Bailey, Gregory B. Shinn, K. Remack, D. Kim, P. Staubs, John A. Rodriguez, Scott R. Summerfelt, J. Gertas |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
2008 17th IEEE International Symposium on the Applications of Ferroelectrics. |
| Popis: |
Reliability data is presented for a 4Mb Ferroelectric Random Access Memory (F-RAM) embedded within a 130nm CMOS process. Write/read endurance in the device exhibits stable intrinsic bit properties through 2.7x1013 cycles. Data retention demonstrates 10 year, 85°C operating life. No fails were observed with full-chip endurance test to 108 cycles followed by 1,000 hours of data retention bake at 125°C. Robust process reliability is demonstrated with no fails at 125°C operating life test. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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