Influence of interfacial energy on the growth of SiC single crystals from high temperature solutions
| Autor: | Guobin Wang, Da Sheng, Hui Li, Zesheng Zhang, Lingling Guo, Zhongnan Guo, Wenxia Yuan, Wenjun Wang, Xiaolong Chen |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | CrystEngComm. 25:560-566 |
| ISSN: | 1466-8033 |
| Popis: | Al addition modifies the interfacial energy of SiC/solution during the growth of SiC single crystals via TSSG, and is beneficial to smoothing the growth surface, improving the crystalline quality, stabilizing the 4H polytype, and increasing the growth rate. |
| Databáze: | OpenAIRE |
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