Evaluation of silicon diodes made on a variety of high-resistivity phosphorus-doped substrates
| Autor: | B.S. Avset |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Physics
Nuclear and High Energy Physics Deep-level transient spectroscopy Silicon business.industry Annealing (metallurgy) Detector chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY High resistivity Phosphorus doped chemistry Hardware_INTEGRATEDCIRCUITS Optoelectronics Wafer business Instrumentation Hardware_LOGICDESIGN Diode |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 385:137-144 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/s0168-9002(96)00882-0 |
| Popis: | Phosphorus-doped high-resistivity silicon from different vendors and production series has been used to fabricate diodes in the same process run. The diodes were investigated by capacitance-voltage, current-voltage and deep level transient spectroscopy (DLTS) measurements with the intention to evaluate the quality variation of silicon diodes due to the starting material. The leakage current measurements showed that the average leakage current at full depletion was ∼ 5 times larger in the worst wafer compared to the best. The wafers were divided into two batches which received two different segregation annealings. It was observed that the improvement in the average leakage current due to long versus short segregation annealing varied substantially between wafers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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