Advanced Metal Gate Electrode Options Compatible with ALD and AVD HfSiOx-Based Gate Dielectrics

Autor:	Zia Karim, Olivier Biossiere, Christoph Lohe, Zhihong Zhang, Woong Park, Christian Manke, Peter K. Baumann, Jeremie Dalton, Sasangan Ramanathan, Johannes Lindner, Tom Seidel
Rok vydání:	2006
Zdroj:	ECS Meeting Abstracts. :1125-1125
ISSN:	2151-2043
DOI:	10.1149/ma2006-02/22/1125
Popis:	not Available.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d469b62f3b54d64e4904aed48153a3b https://doi.org/10.1149/ma2006-02/22/1125 Zobrazit plný text záznamu