Optimizing the Thermally Oxidized 4H-SiC MOS Interface for P-Channel Devices
| Autor: | Charlotte Jonas, Mrinal K. Das, Qing Chun Jon Zhang, Sei Hyung Ryu, Sarah K. Haney |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Dielectric strength business.industry Annealing (metallurgy) Mechanical Engineering Electrical engineering Oxide Condensed Matter Physics Thermal conduction Temperature measurement chemistry.chemical_compound chemistry Mechanics of Materials MOSFET Optoelectronics General Materials Science business Metal gate Leakage (electronics) |
| Zdroj: | Materials Science Forum. :667-670 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.556-557.667 |
| Popis: | Optimization of the thermally oxidized 4H-SiC MOS interface has produced p-channel lateral MOSFETs with hole inversion layer mobility as high as 10 cm2/Vs. This has been accomplished by identifying the 1200oC Dry, 950oC Wet (un-nitrided) oxidation as ideal for hole conduction across the MOS inversion layer and by implant activation annealing at 1800oC of the heavily implanted n-type well. High temperature measurements show that the high mobility and normally-off operation is maintained throughout the operating temperature range. Oxide leakage measurements yield a dielectric strength of 8.5 MV/cm with 90% yield, thereby enabling the manufacture of high performance p-channel devices like the IGBT. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|