Novel damage-free direct metal gate process using atomic layer deposition

Autor:	Joong-Jung Kim, Kwan-Yong Lim, Jinwon Park, Heung-Jae Cho, Jung-Kyu Ko, Dae-Gyu Park, Tae-Ho Cha, Ins-Seok Yeo
Rok vydání:	2002
Předmět:	Materials science business.industry Electrical engineering chemistry.chemical_element Tungsten Capacitance Atomic layer deposition chemistry Vacuum deposition Gate oxide Physical vapor deposition Optoelectronics Tin business Metal gate
Zdroj:	2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).
DOI:	10.1109/vlsit.2001.934949
Popis:	We report the impact of atomic layer deposition (ALD)-TiN on the novel characteristics of the W/TiN/SiO/sub 2//p-Si MOS system. A damage-free direct metal gate was attained using ALD-TiN as manifested by the negligible hysteresis and low interface trap density (D/sub it/) of /spl sim/5/spl times/10/sup 10/ eV/sup -1/cm/sup -2/ near the Si midgap. Gate leakage current level gated with ALD-TiN is remarkably lower than that with physical vapor deposition (PVD)-TiN or poly-Si gate at a similar capacitance equivalent thickness (CET). In addition, ALD-TiN demonstrated highly robust gate oxide reliability with negligible CET variation against high thermal budget, paving the way for the direct metal gate process.
Databáze:	OpenAIRE
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