Autor:	O. Procházková, K. Žďánský, J. Zavadil
Rok vydání:	1999
Předmět:	Materials science Photoluminescence business.industry Analytical chemistry General Physics and Astronomy Epitaxy Acceptor Spectral line Impurity Hall effect Optoelectronics Orders of magnitude (data) business Excitation
Zdroj:	Czechoslovak Journal of Physics. 49:765-774
ISSN:	0011-4626
DOI:	10.1023/a:1021285023021
Popis:	The influence of rare-earth (RE) elements (Ho, Er and Nd) addition during the LPE growth, on electrooptical properties of InP layers is reported. Temperature dependent Hall effect and capacitance-voltage curves show quite a dramatic impact of Er and Nd on shallow impurity and free-carrier concentrations: they were decreased by as much as three orders of magnitude. The background concentration of both donors and acceptors decrease with increasing of RE content in the melt up to concentrations of about 0.25 wt.%. Low-temperature photoluminescence (PL) spectra have been measured for various levels of excitation power and temperature. The major manifestation of the RE admixture is the pronounced narrowing of PL curves and the corresponding appearence of fine spectral features. Temperature and excitation dependences of shallow acceptor related bands of InP:Nd layers are discussed in more detail.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::2d308cc33af8fb57f532ab564afcfc49 https://doi.org/10.1023/a:1021285023021 Zobrazit plný text záznamu Full text from SpringerLink