| Autor: |
I.G. Thayne, A. R. Long, Asen Asenov, Karol Kalna, Ravindranath Droopad, Hill Richard J, Matthias Passlack, David A. J. Moran, J.A. Wilson |
| Rok vydání: |
2007 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions On Nanotechnology. 6:106-112 |
| ISSN: |
1536-125X |
| DOI: |
10.1109/tnano.2006.888543 |
| Popis: |
The potential performance of implant free heterostructure In0.3Ga0.7As channel MOSFETs with gate lengths of 30, 20, and 15 nm is investigated using state-of-the-art Monte Carlo (MC) device simulations. The simulations are carefully calibrated against the electron mobility and sheet density measured on fabricated III-V MOSFET structures with a high-kappa dielectric. The MC simulations show that the 30 nm gate length implant free MOSFET can deliver a drive current of 2174 muA/mum at 0.7 V supply voltage. The drive current increases to 2542 muA/mum in the 20 nm gate length device, saturating at 2535 muA/mum in the 15 nm gate length one. When quantum confinement corrections are included into MC simulations, they have a negligible effect on the drive current in the 30 and 20 nm gate length transistors but lower the 15 nm gate length device drive current at 0.7 V supply voltage by 10%. When compared to equivalent Si based MOSFETs, the implant free heterostructure MOSFETs can deliver a very high performance at low supply voltage, making them suitable for low-power high-performance CMOS applications |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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