Junction characteristics of electron-irradiated Ga0.5In0.5P n+-p diodes and solar cells
| Autor: | Yung Kee Yeo, P. H. Ostdiek, R. L. Hengehold, K. C. Reinhardt |
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| Rok vydání: | 1997 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 81:3700-3706 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.365491 |
| Popis: | The effects of 1 MeV electron irradiation on n+-p mesa diodes and solar cells fabricated from metalorganic chemical vapor deposition grown Ga0.5In0.5P on GaAs have been studied. Upon electron irradiation, Ga0.5In0.5P n+-p junction dark current increased by more than one order of magnitude, but it could be reduced by about 75% after annealing at 250 °C for 10 min. The increase in junction dark current was mainly attributed to reductions in minority carrier lifetimes. It was also found that Ga0.5In0.5P solar cell open-circuit voltage, short-circuit current, fill factor, and air-mass zero conversion efficiency were all reduced on the average by 11%, 18%, 8%, and 33%, respectively, following exposure to 1016 electrons/cm2. However, a significant improvement in the electron-irradiated Ga0.5In0.5P solar cell efficiency was observed via thermal annealing at 250 °C, demonstrating good potential for a longer solar cell lifetime in space through on-orbit thermal annealing. The degradation in solar cell conversion e... |
| Databáze: | OpenAIRE |
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